Sb-mediated growth of n- and p-type AlGaAs by molecular beam epitaxy
نویسندگان
چکیده
منابع مشابه
Periodic index separate confinement heterostructure InGaAs/AlGaAs quantum well lasers grown by temperature modulation molecular beam epitaxy
Articles you may be interested in Temperature modulation molecularbeam epitaxy and its application to the growth of periodic index separate confinement heterostructure InGaAs quantumwell lasers Periodic index separate confinement heterostructure InGaAs/AlGaAs multiple quantum well laser grown by organometallic vapor phase epitaxy Appl. Very low threshold single quantum well gradedindex separate...
متن کامل‘‘p-on-n’’ Si interband tunnel diode grown by molecular beam epitaxy
Si interband tunnel diodes have been successfully fabricated by molecular beam epitaxy and room temperature peak-to-valley current ratios of 1.7 have been achieved. The diodes consist of opposing nand p-type d-doped injectors separated by an intrinsic Si spacer. A ‘‘p-on-n’’ configuration was achieved for the first time using a novel low temperature growth technique that exploits the strong sur...
متن کاملSb-surfactant-mediated growth of Si/Si12yCy superlattices by molecular-beam epitaxy
Si/Si0.97C0.03 superlattices were grown on Si~001! substrates by molecular beam epitaxy ~MBE! to study the use of Sb as a surfactant during Si12yCy growth. In situ reflection high energy electron diffraction ~RHEED! shows that while carbon easily disrupts the two-dimensional growth of homoepitaxial Si, such disruption is suppressed for layers grown on Sb-terminated Si~001! surfaces. Cross-secti...
متن کاملA periodic index separate confinement heterostructure quantum well laser
Articles you may be interested in Periodic index separate confinement heterostructure InGaAs/AlGaAs quantum well lasers grown by temperature modulation molecular beam epitaxy Appl. Temperature modulation molecularbeam epitaxy and its application to the growth of periodic index separate confinement heterostructure InGaAs quantumwell lasers Periodic index separate confinement heterostructure InGa...
متن کاملMolecular-beam epitaxial growth and characterization of silicon-doped AlGaAs and GaAs on (311)A GaAs substrates and their device applications
The possibility of reliable and reproducible p-type doping of (31 l)A GaAs by Si during molecular-beam epitaxial growth and the application of such doping in the realization of high-performance electronic devices have been investigated. It is seen that p-type doping upto a free hole concentration of 4~ lOI cmB3 can be obtained under conditions of low As, flux and high ()660 “C) growth temperatu...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2015